Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Refractive index study of AlxGa1ÀxN films grown on sapphire substrates

A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa12xN films, grown by hydride vapor phase epitaxy ~HVPE! and metalorganic chemical vapor deposition ~MOCVD! on sapphire, at several discrete wavelengths from 442 nm to 1064 nm. In addition, spectroscopic transmittance and reflectance, correlated with the prism coupling results, were us...

Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.

The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed...

Microstructural Characterization of High Indium-Composition InXGa1−XN Epilayers Grown on c-Plane Sapphire Substrates

The growth of high-quality indium ~In!-rich InXGa1 XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1 XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1 XN layers. Composition modulations were observed in the In-ri...

Investigations of HVPE grown Nonpolar a-plane GaN on Slightly Misoriented r-plane Sapphire Substrates

We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1◦ towards the c-axis of the crystal as starting substrates. Starting with an AlN nucleation layer approximately 3.3μm of nonpolar a-plane GaN are grown by metalorganic vapor phase epitaxy (MOVPE). The...

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates